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Journal Articles Physical Review Applied Year : 2022

Ridge Polariton Laser: Different from a Semiconductor Edge-Emitting Laser

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Abstract

We experimentally demonstrate the difference between a ridge polariton laser and a conventional edge-emitting ridge laser operating under electron-hole population inversion. The horizontal laser cavities are 20-60µm long GaN etched ridge structures with vertical Bragg refectors. We investigatethe laser threshold under optical pumping and assess quantitatively the effect of a varying optically-pumped length. The laser effect is achieved for an exciton reservoir length of just 15% of the cavity length, which would not be possible in a conventional ridge laser, with an inversionlesspolaritonic gain about 10 times larger than in equivalent GaN lasers. This combination of a very short injection section and a strong gain paves the way to compact microlasers with nonlinear functionalities for integrated photonics.
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Dates and versions

hal-03521600 , version 1 (11-01-2022)
hal-03521600 , version 2 (05-10-2022)

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Cite

Hassen Souissi, M. Gromovyi, T Gueye, Christelle Brimont, Laetitia Doyennette, et al.. Ridge Polariton Laser: Different from a Semiconductor Edge-Emitting Laser. Physical Review Applied, 2022, 18 (4), pp.044029. ⟨10.1103/PhysRevApplied.18.044029⟩. ⟨hal-03521600v2⟩
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