Evaluation of the electrical properties of ScAlN/GaN HEMTs grown by ammonia source molecular beam epitaxy

Caroline Elias (1, 2) , Sebastien Chenot (1, 2) , Florian Bartoli (1, 2) , Seif El-Whibi (3) , Jean-Claude de Jaeger (4, 5) , Marie Lesecq (4, 5) , Maxime Hugues (1, 2) , Yvon Cordier (1, 2)

1 CRHEA - Centre de recherche sur l'hétéroepitaxie et ses applications
2 UniCA - Université Côte d'Azur
3 INL - I-Lum - INL - Ingénierie et conversion de lumière (i-Lum)
4 PUISSANCE - IEMN - Puissance - IEMN
5 IEMN - Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520

In this work, the electrical properties of ScAlN/GaN high electron mobility transistor (HEMT) heterostructures grown by ammonia source molecular beam epitaxy are studied. The effect of growth temperature and ScAlN barrier thickness on 2DEG carrier density is investigated with capacitance-voltage measurements. Alloyed ohmic contacts have been developed to evaluate the electron mobility and a first functional transistor is demonstrated.

Domains: Physics [physics]; Engineering Sciences [physics]

Caroline Elias, Sebastien Chenot, Florian Bartoli, Seif El-Whibi, Jean-Claude de Jaeger, et al.. Evaluation of the electrical properties of ScAlN/GaN HEMTs grown by ammonia source molecular beam epitaxy. Wocsdice - Exmatec 2023 Conference, May 2023, Palermo, Italy. ⟨hal-04444068⟩