Above 70% PAE in Q-band with AlN/GaN HEMTs structures

Kathia Harrouche (1) , Riad Kabouche (1) , Etienne Okada (1, 2) , F Medjdoub (1, 3)

1 IEMN - Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520
2 PCMP - IEMN - Plateforme de Caractérisation Multi-Physiques - IEMN
3 WIND - IEMN - WIde baNd gap materials and Devices - IEMN

In this paper, we report on a vertically scaled AlN/GaN HEMT technology. The comparison between a 3 nm and 4 nm barrier thickness shows both superior performances and robustness for the thinner barrier layer, which is attributed to the reduced mechanical strain into the heterostructure. The impact of the gateto-drain distance (LGD) on the RF performances has been studied at 40 GHz. Pulsed mode large signal characteristics reveal an outstanding combination of power added efficiency (PAE) of 72% with a saturated output power density (POUT) > 3.5 W/mm at VDS = 20V with LGD=0.5 µm. Furthermore, short term RF reliability assessment demonstrates a promising robustness.

Domaines: Sciences de l'ingénieur [physics]

Kathia Harrouche, Riad Kabouche, Etienne Okada, F Medjdoub. Above 70% PAE in Q-band with AlN/GaN HEMTs structures. WOCSDICE2021, Jun 2021, Bristol, United Kingdom. ⟨hal-03279173⟩