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Journal Articles Semiconductor Science and Technology Year : 2016

Gallium nitride surface protection during RTA annealing with a GaO x N y cap-layer

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Wahid Khalfaoui
  • Function : Author
T Oheix
  • Function : Author
F Cayrel
  • Function : Author
R Benoit
A Yvon
  • Function : Author
E Collard
  • Function : Author
D Alquier
  • Function : Author
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hal-03878824 , version 1 (30-11-2022)

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Wahid Khalfaoui, T Oheix, F Cayrel, R Benoit, A Yvon, et al.. Gallium nitride surface protection during RTA annealing with a GaO x N y cap-layer. Semiconductor Science and Technology, 2016, 31 (4), pp.045008. ⟨10.1088/0268-1242/31/4/045008⟩. ⟨hal-03878824⟩
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