Skip to Main content Skip to Navigation
New interface
Journal articles

Photoexcited electron dynamics and energy loss rate in silicon: temperature dependence and main scattering channels

Abstract : In this work, we revisit the DFT-based results for the electron-phonon scattering in highly excited silicon. Using state-of-the-art ab initio methods, we examine the main scattering channels which contribute to the total electron-phonon scattering rate and to the energy loss rate of photoexcited electrons in silicon as well as their temperature dependence. Both temperature dependence and the main scattering channels are shown to strongly differ for the total electron-phonon scattering rate and for the energy loss rate of photoexcited electrons. Whereas the total electron-phonon scattering rate increases strongly with temperature, the temperature dependence of the energy loss rate is negligible. Also, while acoustic phonons dominate the total electron-phonon scattering rate at 300 K, the main contribution to the energy loss rate comes from optical modes.
Complete list of metadata

https://hal-cnrs.archives-ouvertes.fr/hal-03858225
Contributor : Jelena Sjakste Connect in order to contact the contributor
Submitted on : Thursday, November 17, 2022 - 4:18:22 PM
Last modification on : Thursday, November 24, 2022 - 3:57:07 AM

File

sjakste_paper_spie_preprint.pd...
Files produced by the author(s)

Identifiers

Collections

Citation

Raja Sen, Nathalie Vast, Jelena Sjakste. Photoexcited electron dynamics and energy loss rate in silicon: temperature dependence and main scattering channels. Proceedings-of-the-SPIE-The-International-Society-for-Optical-Engineering, 2022, SPIE Proceedings, 12132, pp.1213204. ⟨10.1117/12.2621174⟩. ⟨hal-03858225⟩

Share

Metrics

Record views

0

Files downloads

0