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In-depth electrical characterization of deca-nanometer InGaAs MOSFET down to deep cryogenic temperatures

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https://hal-cnrs.archives-ouvertes.fr/hal-03853017
Contributor : francis balestra Connect in order to contact the contributor
Submitted on : Tuesday, November 15, 2022 - 11:19:18 AM
Last modification on : Tuesday, November 29, 2022 - 3:12:21 AM

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  • HAL Id : hal-03853017, version 1

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F. Serra Di Santa Maria, Francis Balestra. In-depth electrical characterization of deca-nanometer InGaAs MOSFET down to deep cryogenic temperatures. 2022. ⟨hal-03853017⟩

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