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Modelling of self-heating effect in FDSOI and bulk MOSFETs operated in deep cryogenic conditions, Solid-State Electronics, to be published (2022)

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https://hal-cnrs.archives-ouvertes.fr/hal-03852787
Contributor : francis balestra Connect in order to contact the contributor
Submitted on : Tuesday, November 15, 2022 - 10:31:48 AM
Last modification on : Tuesday, November 29, 2022 - 3:12:43 AM

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  • HAL Id : hal-03852787, version 1

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Gérard Ghibaudo, Francis Balestra. Modelling of self-heating effect in FDSOI and bulk MOSFETs operated in deep cryogenic conditions, Solid-State Electronics, to be published (2022). Solid-State Electronics, 2022. ⟨hal-03852787⟩

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