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Visualizing In‐Plane Junctions in Nitrogen‐Doped Graphene

Abstract : Controlling the spatial distribution of dopants in graphene is the gateway to the realization of graphene-based electronic components. Here, we show that a submonolayer of self-assembled physisorbed molecules can be used as a resist during a post-synthesis nitrogen doping process to realize a nanopatterning of nitrogen dopants in graphene. The resulting formation of domains with different nitrogen concentrations allows obtaining nn' and pn junctions in graphene. We use scanning tunneling microscopy to measure the electronic properties of the junctions at the atomic scale and reveal their intrinsic width that is found to be around 7 nm corresponding to a sharp junction regime.
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https://hal-cnrs.archives-ouvertes.fr/hal-03850544
Contributor : Jérôme Lagoute Connect in order to contact the contributor
Submitted on : Sunday, November 13, 2022 - 10:47:43 PM
Last modification on : Sunday, November 20, 2022 - 3:27:26 AM

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Mehdi Bouatou, Cyril Chacon, Aleksander Bach Lorentzen, Huu Thoai Ngo, Yann Girard, et al.. Visualizing In‐Plane Junctions in Nitrogen‐Doped Graphene. Advanced Functional Materials, In press, pp.2208048. ⟨10.1002/adfm.202208048⟩. ⟨hal-03850544⟩

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