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Journal Articles Applied Physics Letters Year : 2022

Coulomb blockade: Toward charge control of self-assembled GaN quantum dots at room temperature

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Abstract

We present capacitance-voltage [C(V)] measurements of self-assembled wurtzite-GaN quantum dots (QDs). The QDs are embedded in a charge-tunable diode structure and were grown by molecular beam epitaxy in the Stranski-Krastanov growth method. The internal electric fields present in GaN and its alloys together with its wide bandgap make this material system an ideal candidate for high-temperature quantum applications. Charges and the internal electric fields influence the energy spacing in the QDs. We correlate photoluminescence measurements with C(V) measurements and show single-electron charging of the QDs and a Coulomb blockade energy of around 60 meV at room temperature. This finding demonstrates the possibility of quantum applications at room temperature.
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Dates and versions

hal-03828253 , version 1 (16-12-2022)

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C A Sgroi, J. Brault, J.-Y. Duboz, S. Chenot, P. Vennéguès, et al.. Coulomb blockade: Toward charge control of self-assembled GaN quantum dots at room temperature. Applied Physics Letters, 2022, 120 (1), pp.012105. ⟨10.1063/5.0073864⟩. ⟨hal-03828253⟩
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