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A systematic study of spin-dependent recombination in GaAs1-xNx as a function of nitrogen content

Abstract : A systematic study of spin-dependent recombination (SDR) under steady-state optical pumping conditions in dilute nitride semiconductors as a function of nitrogen content is reported. The alloy content is determined by a fit of the photoluminescence (PL) intensity using a Roosbroeck-Shockley relation and verified by a study of the GaN-like LO2 phonon peak in a Raman spectroscopy map. PL spectra taken from alloys of the form GaAs_{1-x}N{_x} where 0.022 < x < 0.036 exhibit PL intensity increases when switching from a linearly- to a circularly-polarized pump up to a factor of 5 for x = 0.022. This work used a 1.39 eV laser with a radius of 0.6 um. The observed SDR ratio monotonically decreases with increasing x, reaching 1.5 for x = 0.036. Moreover, the excitation power required to obtain maximum SDR systematically increases with increasing x, varying from 0.6 mW for x = 0.022 to 15 mW for x = 0.036. These observations are consistent with an increase in the density of electronically active defects with increasing nitrogen content, both those responsible for the SDR as well as other, standard Shockley-Read-Hall (SRH) centers.
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Preprints, Working Papers, ...
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https://hal-cnrs.archives-ouvertes.fr/hal-03808306
Contributor : Alistair Rowe Connect in order to contact the contributor
Submitted on : Monday, October 10, 2022 - 2:48:58 PM
Last modification on : Saturday, October 29, 2022 - 3:57:24 AM

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  • HAL Id : hal-03808306, version 1
  • ARXIV : 2208.08785

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A. C. Ulibarri, Rishabh Kothari, Alejandro Garcia, J-C Harmand, Sangjun Park, et al.. A systematic study of spin-dependent recombination in GaAs1-xNx as a function of nitrogen content. 2022. ⟨hal-03808306⟩

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