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Sub-10-nm Diameter GaSb/InAs Vertical Nanowire Esaki Diodes with Ideal Scaling Behavior: Experiments and Simulations

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https://hal-cnrs.archives-ouvertes.fr/hal-03793958
Contributor : Marco Pala Connect in order to contact the contributor
Submitted on : Friday, November 18, 2022 - 11:05:08 AM
Last modification on : Monday, November 21, 2022 - 11:15:25 AM

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Yanjie Shao, Marco G. Pala, David Esseni, Jesus del Alamo. Sub-10-nm Diameter GaSb/InAs Vertical Nanowire Esaki Diodes with Ideal Scaling Behavior: Experiments and Simulations. 2021 IEEE 67th International Electron Devices Meeting (IEDM), Dec 2021, San Francisco, United States. pp.32.1.1-32.1.4, ⟨10.1109/IEDM19574.2021.9720540⟩. ⟨hal-03793958⟩

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