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Electrical, morphological and structural properties of Ti ohmic contacts formed on n-type 4H–SiC by laser thermal annealing

Clément Berger 1 Daniel Alquier 1 Micka Bah 1 Jean-François Michaud 1 
1 GREMAN - UMR 7347 - GREMAN (matériaux, microélectronique, acoustique et nanotechnologies)
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https://hal-cnrs.archives-ouvertes.fr/hal-03755512
Contributor : Jean-François Michaud Connect in order to contact the contributor
Submitted on : Monday, August 22, 2022 - 9:08:12 AM
Last modification on : Tuesday, August 23, 2022 - 3:45:04 AM

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UNIV-TOURS | CNRS | GREMAN | INSA-GROUPE | INSA-CVL

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Clément Berger, Daniel Alquier, Micka Bah, Jean-François Michaud. Electrical, morphological and structural properties of Ti ohmic contacts formed on n-type 4H–SiC by laser thermal annealing. Materials Science in Semiconductor Processing, Elsevier, 2022, 151, pp.106983. ⟨10.1016/j.mssp.2022.106983⟩. ⟨hal-03755512⟩

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