Electrical, morphological and structural properties of Ti ohmic contacts formed on n-type 4H–SiC by laser thermal annealing - Archive ouverte HAL Access content directly
Journal Articles Materials Science in Semiconductor Processing Year : 2022

Electrical, morphological and structural properties of Ti ohmic contacts formed on n-type 4H–SiC by laser thermal annealing

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hal-03755512 , version 1 (22-08-2022)

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Clément Berger, Daniel Alquier, Micka Bah, Jean-François Michaud. Electrical, morphological and structural properties of Ti ohmic contacts formed on n-type 4H–SiC by laser thermal annealing. Materials Science in Semiconductor Processing, 2022, 151, pp.106983. ⟨10.1016/j.mssp.2022.106983⟩. ⟨hal-03755512⟩
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