Growth of boron doped CVD diamond on a (113) orientation for power electronic devices

Audrey Valentin (1) , A Tallaire (1) , V Mille (1) , L William (1) , M A Pinault-Thaury (2) , F Jomard (2) , J Achard (1)

1 LSPM - Laboratoire des Sciences des Procédés et des Matériaux
2 GEMAC - Groupe d'Etude de la Matière Condensée

Domains: Physics [physics]; Condensed Matter [cond-mat]; Materials Science [cond-mat.mtrl-sci]; Engineering Sciences [physics]; Chemical and Process Engineering; Engineering Sciences [physics]; Materials; Engineering Sciences [physics]; Micro and nanotechnologies/Microelectronics; Engineering Sciences [physics]; Electronics

Audrey Valentin, A Tallaire, V Mille, L William, M A Pinault-Thaury, et al.. Growth of boron doped CVD diamond on a (113) orientation for power electronic devices. Surface and Bulk Defects in Diamond (SBDD ) XXI, Mar 2016, Hasselt, Belgium. ⟨hal-03578189⟩