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Poster communications

Growth of boron doped CVD diamond on a (113) orientation for power electronic devices

Audrey Valentin 1 A Tallaire 1 V Mille 1 L William 1 M Pinault-Thaury 2 F Jomard 2 J Achard 1
1 LSPM - Laboratoire des Sciences des Procédés et des Matériaux
2 GEMAC - Groupe d'Etude de la Matière Condensée
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Poster communications
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https://hal-cnrs.archives-ouvertes.fr/hal-03578189
Contributor : Audrey Valentin Connect in order to contact the contributor
Submitted on : Thursday, February 17, 2022 - 10:05:50 AM
Last modification on : Sunday, February 27, 2022 - 3:28:08 AM

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  • HAL Id : hal-03578189, version 1

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CNRS | GEMAC | SORBONNE-PARIS-NORD | LSPM_P13 | GALILE | GS-ENGINEERING | UVSQ | UNIV-PARIS13 | INSTITUT-SCIENCES-LUMIERE | UNIV-PARIS-SACLAY | USPC

Citation

Audrey Valentin, A Tallaire, V Mille, L William, M Pinault-Thaury, et al.. Growth of boron doped CVD diamond on a (113) orientation for power electronic devices. Surface and Bulk Defects in Diamond (SBDD ) XXI, Mar 2016, Hasselt, Belgium. ⟨hal-03578189⟩

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