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Wafer-scale van der Waals Epitaxy of III-Nitride Devices on h-BN-An Overview of 2D/3D Epitaxy, Device Fabrication, Mechanical Release-Transfer Methods and Device Performances

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https://hal-cnrs.archives-ouvertes.fr/hal-03477832
Contributor : NADEGE DASTILLUNG Connect in order to contact the contributor
Submitted on : Monday, December 13, 2021 - 3:45:14 PM
Last modification on : Sunday, June 26, 2022 - 3:24:54 AM

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  • HAL Id : hal-03477832, version 1

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Abdallah Ougazzaden, Suresh Sundaram, Thi Quynh Phuong Vuong, Soufiane Karrakchou, Adama Mballo, et al.. Wafer-scale van der Waals Epitaxy of III-Nitride Devices on h-BN-An Overview of 2D/3D Epitaxy, Device Fabrication, Mechanical Release-Transfer Methods and Device Performances. MRS 2021, Dec 2021, Boston, United States. ⟨hal-03477832⟩

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