Van der Waals epitaxy by MOCVD of III-Nitrides using two-dimensional hexagonal boron nitride : applications and persperctives - Archive ouverte HAL Access content directly
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Van der Waals epitaxy by MOCVD of III-Nitrides using two-dimensional hexagonal boron nitride : applications and persperctives

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hal-03477812 , version 1 (13-12-2021)

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  • HAL Id : hal-03477812 , version 1

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Thi Quynh Phuong Vuong, Adama Mballo, Soufiane Karrakchou, Ashutosh Srivastava, Rajat Gujrati, et al.. Van der Waals epitaxy by MOCVD of III-Nitrides using two-dimensional hexagonal boron nitride : applications and persperctives. Workshop Wide bandgap materials, May 2021, Wuhan, China. ⟨hal-03477812⟩
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