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Conference papers

Van der Waals epitaxy by MOCVD of III-Nitrides using two-dimensional hexagonal boron nitride : applications and persperctives

Thi Quynh Phuong Vuong 1 Adama Mballo 1 Soufiane Karrakchou 1 Ashutosh Srivastava 1 Rajat Gujrati 1 Hibat Adjmi 1 Suresh Sundaram 1 Paul Voss 1 Jean-Paul Salvestrini 1 Abdallah Ougazzaden 1 
1 Georgia Tech Lorraine [Metz]
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Conference papers
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https://hal-cnrs.archives-ouvertes.fr/hal-03477812
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Submitted on : Monday, December 13, 2021 - 3:39:21 PM
Last modification on : Sunday, June 26, 2022 - 3:24:54 AM

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  • HAL Id : hal-03477812, version 1

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CNRS | UNIV-FCOMTE | CENTRALESUPELEC | UMI-GTL

Citation

Thi Quynh Phuong Vuong, Adama Mballo, Soufiane Karrakchou, Ashutosh Srivastava, Rajat Gujrati, et al.. Van der Waals epitaxy by MOCVD of III-Nitrides using two-dimensional hexagonal boron nitride : applications and persperctives. Workshop Wide bandgap materials, May 2021, Wuhan, China. ⟨hal-03477812⟩

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