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Conference papers
Van der Waals epitaxy by MOCVD of III-Nitrides using two-dimensional hexagonal boron nitride : applications and persperctives
Thi Quynh Phuong Vuong
1
Adama Mballo
1
Soufiane Karrakchou
1
Ashutosh Srivastava
1
Rajat Gujrati
1
Hibat Adjmi
1
Suresh Sundaram
1
Paul Voss
1
Jean-Paul Salvestrini
1
Abdallah Ougazzaden
1
Thi Quynh Phuong Vuong 1
Author
Adama Mballo 1
Author
Soufiane Karrakchou 1
Author
Ashutosh Srivastava 1
Author
Jean-Paul Salvestrini 1
Author IdHAL : jean-paul-salvestrini
Abdallah Ougazzaden 1
Author
1
Georgia Tech Lorraine [Metz] (Metz Technopôle 2-3 rue Marconi 57070 METZ - France)
- UFC - Université de Franche-Comté (1 rue Goudimel 25030 Besançon cedex - France)
- Ecole Supérieure d'Electricité - SUPELEC (FRANCE) (France)
- Georgia Institute of Technology [Atlanta] (North Avenue, Atlanta, GA 30332 - United States)
- CentraleSupélec (3, rue Joliot Curie, Plateau de Moulon, 91192 GIF-SUR-YVETTE Cedex - France)
- Ecole Nationale Supérieure des Arts et Metiers Metz (France)
- CNRS - Centre National de la Recherche Scientifique : IRL2958 / UMI2958 (France)
Document type :
Conference papers
Domain :
Complete list of metadata
https://hal-cnrs.archives-ouvertes.fr/hal-03477812
Contributor : Nadege Dastillung Connect in order to contact the contributor
Submitted on : Monday, December 13, 2021 - 3:39:21 PM
Last modification on : Tuesday, January 4, 2022 - 6:12:57 AM
Contributor : Nadege Dastillung Connect in order to contact the contributor
Submitted on : Monday, December 13, 2021 - 3:39:21 PM
Last modification on : Tuesday, January 4, 2022 - 6:12:57 AM
Identifiers
- HAL Id : hal-03477812, version 1
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Citation
Thi Quynh Phuong Vuong, Adama Mballo, Soufiane Karrakchou, Ashutosh Srivastava, Rajat Gujrati, et al.. Van der Waals epitaxy by MOCVD of III-Nitrides using two-dimensional hexagonal boron nitride : applications and persperctives. Workshop Wide bandgap materials, May 2021, Wuhan, China. ⟨hal-03477812⟩
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