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Conference papers

Van der Waals epitaxy by MOCVD of III-Nitrides using two-dimensional hexagonal boron nitride : applications and persperctives

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https://hal-cnrs.archives-ouvertes.fr/hal-03477812
Contributor : NADEGE DASTILLUNG Connect in order to contact the contributor
Submitted on : Monday, December 13, 2021 - 3:39:21 PM
Last modification on : Sunday, June 26, 2022 - 3:24:54 AM

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  • HAL Id : hal-03477812, version 1

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Thi Quynh Phuong Vuong, Adama Mballo, Soufiane Karrakchou, Ashutosh Srivastava, Rajat Gujrati, et al.. Van der Waals epitaxy by MOCVD of III-Nitrides using two-dimensional hexagonal boron nitride : applications and persperctives. Workshop Wide bandgap materials, May 2021, Wuhan, China. ⟨hal-03477812⟩

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