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Nanoscale structural and electrical properties of graphene grown on AlGaN by catalyst-free chemical vapor deposition
Abstract : The integration of graphene (Gr) with nitride semiconductors is highly interesting for applications in high-power/high-frequency electronics and optoelectronics. In this work, we demonstrated the direct growth of Gr on Al0.5Ga0.5N/sapphire templates by propane (C3H8) chemical vapor deposition (CVD) at temperature of 1350°C. After optimization of the C3H8 flow rate, a uniform and conformal Gr coverage was achieved, which proved beneficial to prevent degradation of AlGaN morphology. X-ray photoemission spectroscopy (XPS) revealed Ga loss and partial oxidation of Al in the near-surface AlGaN region. Such chemical modification of a 2 nm thick AlGaN surface region was confirmed by cross-sectional scanning transmission electron microscopy (STEM) combined with electron energy loss spectroscopy (EELS), which also showed the presence of a bilayer of Gr with partial sp 2 /sp 3 hybridization. Raman spectra indicated that the deposited Gr is nanocrystalline (with domain size 7 nm) and compressively strained. A Gr sheet resistance of 15.8 k/sq was evaluated by four-point-probe measurements, consistently with the nanocrystalline nature of these films. Furthermore, nanoscale resolution current mapping by conductive atomic force microscopy (C-AFM) indicated local variations of the Gr carrier density at a mesoscopic scale, which can be ascribed to changes in the charge transfer from the substrate due to local oxidation of AlGaN or to the presence of Gr wrinkles.
https://hal-cnrs.archives-ouvertes.fr/hal-03453974
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Submitted on : Monday, November 29, 2021 - 7:49:48 AM
Last modification on : Tuesday, January 4, 2022 - 6:36:06 AM
Contributor : Yvon Cordier Connect in order to contact the contributor
Submitted on : Monday, November 29, 2021 - 7:49:48 AM
Last modification on : Tuesday, January 4, 2022 - 6:36:06 AM
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