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Dissipationless zero energy epigraphene edge state for nanoelectronics

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Vladimir Prudkovskiy
Yiran Hu
  • Function : Author
Kaimin Zhang
  • Function : Author
Yue Hu
  • Function : Author
Peixuan Ji
  • Function : Author
Grant Nunn
  • Function : Author
Jian Zhao
  • Function : Author
Chengqian Shi
  • Function : Author
Antonio Tejeda
David Wander
  • Function : Author
Alessandro de Cecco
  • Function : Author
Clemens Winkelmann
Yuxuan Jiang
  • Function : Author
Tianhao Zhao
  • Function : Author
Katsunori Wakabayashi
Zhigang Jiang
Lei Ma
  • Function : Author
Walt de Heer
  • Function : Author

Abstract

The graphene edge state is essential for graphene electronics and fundamental in graphene theory, however it is not observed in deposited graphene. Here we report the discovery of the epigraphene edge state (EGES) in conventionally patterned epigraphene using plasma-based lithography that stabilizes and passivates the edges probably by fusing the graphene edges to the non-polar silicon carbide substrate, as expected. Transport involves a single, essentially dissipationless conductance channel at zero energy up to room temperature. The Fermi level is pinned at zero energy. The EGES does not generate a Hall voltage and the usual quantum Hall effect is observed only after subtraction of the EGES current. EGES transport is highly protected and apparently mediated by an unconventional zero-energy fermion that is half electron and half hole. Interconnected networks involving only the EGES can be patterned, opening the door to a new graphene nanoelectronics paradigm that is relevant for quantum computing.

Dates and versions

hal-03445683 , version 1 (24-11-2021)

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Vladimir Prudkovskiy, Yiran Hu, Kaimin Zhang, Yue Hu, Peixuan Ji, et al.. Dissipationless zero energy epigraphene edge state for nanoelectronics. 2021. ⟨hal-03445683⟩
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