Physical Simulation of Silicon-Nanocrystal-Based Single-Electron Transistors

Audrey Valentin; Vincent Talbo; Sylvie Galdin-Retailleau; Philippe Dollfus

doi:10.1109/TED.2011.2161611

Journal articles

Physical Simulation of Silicon-Nanocrystal-Based Single-Electron Transistors

Audrey Valentin ¹ Vincent Talbo ² Sylvie Galdin-Retailleau ² Philippe Dollfus ²

1 LSPM - Laboratoire des Sciences des Procédés et des Matériaux

2 IEF - Institut d'électronique fondamentale

Document type :

Journal articles

Domain :

Physics [physics] / Condensed Matter [cond-mat] / Materials Science [cond-mat.mtrl-sci]

Engineering Sciences [physics] / Chemical and Process Engineering

Engineering Sciences [physics] / Materials

Engineering Sciences [physics] / Micro and nanotechnologies/Microelectronics

Engineering Sciences [physics] / Electronics

Complete list of metadata

https://hal-cnrs.archives-ouvertes.fr/hal-03440056
Contributor : Audrey Valentin Connect in order to contact the contributor
Submitted on : Monday, November 22, 2021 - 1:17:13 PM
Last modification on : Sunday, June 26, 2022 - 12:17:51 PM

Physical Simulation of Silicon-Nanocrystal-Based Single-Electron Transistors

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Physical Simulation of Silicon-Nanocrystal-Based Single-Electron Transistors

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