Physical Simulation of Silicon-Nanocrystal-Based Single-Electron Transistors

Audrey Valentin (1) , Vincent Talbo (2) , Sylvie Galdin-Retailleau (2) , Philippe Dollfus (2)

1 LSPM - Laboratoire des Sciences des Procédés et des Matériaux
2 IEF - Institut d'électronique fondamentale

Domains: Physics [physics]; Condensed Matter [cond-mat]; Materials Science [cond-mat.mtrl-sci]; Engineering Sciences [physics]; Chemical and Process Engineering; Engineering Sciences [physics]; Materials; Engineering Sciences [physics]; Micro and nanotechnologies/Microelectronics; Engineering Sciences [physics]; Electronics

Audrey Valentin, Vincent Talbo, Sylvie Galdin-Retailleau, Philippe Dollfus. Physical Simulation of Silicon-Nanocrystal-Based Single-Electron Transistors. IEEE Transactions on Electron Devices, 2011, 58 (10), pp.3286-3293. ⟨10.1109/TED.2011.2161611⟩. ⟨hal-03440056⟩