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Physical Simulation of Silicon-Nanocrystal-Based Single-Electron Transistors
Audrey Valentin 1
Author IdHAL : audrey-valentin ORCID : https://orcid.org/0000-0002-3384-8732
Vincent Talbo 2
Author
Sylvie Galdin-Retailleau 2
Author
Philippe Dollfus 2
Author
1
LSPM - Laboratoire des Sciences des Procédés et des Matériaux (Institut Galilée, Université Paris 13, 99 avenue Jean-baptiste Clément, F-93430 Villetaneuse - France)
- Institut Galilée (France)
- USPC - Université Sorbonne Paris Cité (Université Sorbonne Paris Cité | 100-104, avenue de France | 75013 Paris - France)
- CNRS - Centre National de la Recherche Scientifique : UPR3407 (France)
- Université Sorbonne Paris Nord (99, avenue Jean-Baptiste Clément, 93430 Villetaneuse - France)
2
IEF - Institut d'électronique fondamentale (bat. 220 Av Georges Clémenceau 91405 ORSAY CEDEX - France)
- UP11 - Université Paris-Sud - Paris 11 (Bâtiment 300 - 91405 Orsay cedex - France)
- CNRS - Centre National de la Recherche Scientifique : UMR8622 (France)
Document type :
Journal articles
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https://hal-cnrs.archives-ouvertes.fr/hal-03440056
Contributor : Audrey Valentin Connect in order to contact the contributor
Submitted on : Monday, November 22, 2021 - 1:17:13 PM
Last modification on : Tuesday, November 23, 2021 - 3:43:58 AM
Contributor : Audrey Valentin Connect in order to contact the contributor
Submitted on : Monday, November 22, 2021 - 1:17:13 PM
Last modification on : Tuesday, November 23, 2021 - 3:43:58 AM
Identifiers
- HAL Id : hal-03440056, version 1
- DOI : 10.1109/TED.2011.2161611
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Citation
Audrey Valentin, Vincent Talbo, Sylvie Galdin-Retailleau, Philippe Dollfus. Physical Simulation of Silicon-Nanocrystal-Based Single-Electron Transistors. IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2011, 58 (10), pp.3286-3293. ⟨10.1109/TED.2011.2161611⟩. ⟨hal-03440056⟩
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