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Journal Articles IEEE Transactions on Electron Devices Year : 2011

Physical Simulation of Silicon-Nanocrystal-Based Single-Electron Transistors

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hal-03440056 , version 1 (22-11-2021)

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Audrey Valentin, Vincent Talbo, Sylvie Galdin-Retailleau, Philippe Dollfus. Physical Simulation of Silicon-Nanocrystal-Based Single-Electron Transistors. IEEE Transactions on Electron Devices, 2011, 58 (10), pp.3286-3293. ⟨10.1109/TED.2011.2161611⟩. ⟨hal-03440056⟩
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