Geant4 physics processes for microdosimetry simulation: Very low energy electromagnetic models for electrons in silicon - Archive ouverte HAL Access content directly
Journal Articles Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms Year : 2012

Geant4 physics processes for microdosimetry simulation: Very low energy electromagnetic models for electrons in silicon

(1) , , , (2) , (2)
1
2
Audrey Valentin
Laboratoire des Sciences des Procédés et des Matériaux
CV
M. Raine
  • Function : Author
J.-E. Sauvestre
  • Function : Author
M. Gaillardin
  • Function : Author
DAM Île-de-France
P. Paillet
  • Function : Author
DAM Île-de-France

Domains

Physics [physics] Condensed Matter [cond-mat] Materials Science [cond-mat.mtrl-sci] Engineering Sciences [physics] Chemical and Process Engineering Engineering Sciences [physics] Materials Engineering Sciences [physics] Micro and nanotechnologies/Microelectronics Engineering Sciences [physics] Electronics

Audrey Valentin  : Connect in order to contact the contributor

https://hal-cnrs.archives-ouvertes.fr/hal-03440042

Submitted on : Monday, November 22, 2021-1:13:48 PM

Last modification on : Wednesday, November 24, 2021-3:32:17 AM

Not file

Dates and versions

hal-03440042 , version 1 (22-11-2021)

Identifiers

Cite

Audrey Valentin, M. Raine, J.-E. Sauvestre, M. Gaillardin, P. Paillet. Geant4 physics processes for microdosimetry simulation: Very low energy electromagnetic models for electrons in silicon. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2012, 288, pp.66-73. ⟨10.1016/j.nimb.2012.07.028⟩. ⟨hal-03440042⟩

Export

BibTeX TEI Dublin Core DC Terms EndNote Datacite

Collections

CEA UNIV-PARIS13 CNRS LSPM_P13 DAM GALILE SORBONNE-PARIS-NORD
15 View
0 Download

Altmetric

Share

Gmail Facebook Twitter LinkedIn More