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Geant4 physics processes for microdosimetry simulation: Very low energy electromagnetic models for electrons in silicon

Audrey Valentin 1 M. Raine J.-E. Sauvestre M. Gaillardin 2 P. Paillet 2 
1 LSPM - Laboratoire des Sciences des Procédés et des Matériaux
2 DAM/DIF - DAM Île-de-France
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https://hal-cnrs.archives-ouvertes.fr/hal-03440042
Contributor : Audrey Valentin Connect in order to contact the contributor
Submitted on : Monday, November 22, 2021 - 1:13:48 PM
Last modification on : Wednesday, November 24, 2021 - 3:32:17 AM

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CEA | UNIV-PARIS13 | CNRS | LSPM_P13 | DAM | GALILE | SORBONNE-PARIS-NORD

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Audrey Valentin, M. Raine, J.-E. Sauvestre, M. Gaillardin, P. Paillet. Geant4 physics processes for microdosimetry simulation: Very low energy electromagnetic models for electrons in silicon. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Elsevier, 2012, 288, pp.66-73. ⟨10.1016/j.nimb.2012.07.028⟩. ⟨hal-03440042⟩

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