Multi-microscopy nanoscale characterization of the doping profile in a hybrid Mg/Ge-doped tunnel junction. - Archive ouverte HAL Access content directly
Journal Articles Nanotechnology Year : 2020

Multi-microscopy nanoscale characterization of the doping profile in a hybrid Mg/Ge-doped tunnel junction.

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A Mavel
  • Function : Author
V Fan Arcara
  • Function : Author
B Damilano
Ioanna Dimkou
S Vézian
  • Function : Author
A Grenier
  • Function : Author
M Veillerot
  • Function : Author
N Rochat
  • Function : Author
G Feuillet
  • Function : Author
B Bonef
  • Function : Author
L Rigutti
  • Function : Author
E Monroy
D Cooper
  • Function : Author

Abstract

A multi-microscopy investigation of a GaN tunnel junction (TJ) grown on an InGaN-based light emitting diode (LED) has been performed. The TJ consists of a heavily Ge-doped n-type GaN layer grown by ammonia-based molecular-beam epitaxy on a heavily Mg-doped p-type GaN thin layer, grown by metalorganic vapor phase epitaxy. A correlation of atom probe tomography, electron holography and secondary ion mass spectrometry has been performed in order to investigate the nm-scale distribution of both Mg and Ge at the TJ. Experimental results reveal that Mg segregates at the TJ interface, and diffuses into the Ge-doped layer. As a result, the dopant concentration and distribution differ significantly from the nominal values. Despite this, electron holography reveals a TJ depletion width of ~7 nm, in agreement with band diagram simulations using the experimentally determined dopant distribution.
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Dates and versions

hal-03411352 , version 1 (02-11-2021)

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E Di Russo, A Mavel, V Fan Arcara, B Damilano, Ioanna Dimkou, et al.. Multi-microscopy nanoscale characterization of the doping profile in a hybrid Mg/Ge-doped tunnel junction.. Nanotechnology, 2020, 31 (46), pp.465706. ⟨10.1088/1361-6528/ab996c⟩. ⟨hal-03411352⟩
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