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Multi-microscopy nanoscale characterization of the doping profile in a hybrid Mg/Ge-doped tunnel junction.

Abstract : A multi-microscopy investigation of a GaN tunnel junction (TJ) grown on an InGaN-based light emitting diode (LED) has been performed. The TJ consists of a heavily Ge-doped n-type GaN layer grown by ammonia-based molecular-beam epitaxy on a heavily Mg-doped p-type GaN thin layer, grown by metalorganic vapor phase epitaxy. A correlation of atom probe tomography, electron holography and secondary ion mass spectrometry has been performed in order to investigate the nm-scale distribution of both Mg and Ge at the TJ. Experimental results reveal that Mg segregates at the TJ interface, and diffuses into the Ge-doped layer. As a result, the dopant concentration and distribution differ significantly from the nominal values. Despite this, electron holography reveals a TJ depletion width of ~7 nm, in agreement with band diagram simulations using the experimentally determined dopant distribution.
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https://hal-cnrs.archives-ouvertes.fr/hal-03411352
Contributor : Jean-Yves Duboz Connect in order to contact the contributor
Submitted on : Tuesday, November 2, 2021 - 11:00:26 AM
Last modification on : Monday, November 29, 2021 - 8:26:05 AM

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E Di Russo, A Mavel, V Fan Arcara, B Damilano, I Dimkou, et al.. Multi-microscopy nanoscale characterization of the doping profile in a hybrid Mg/Ge-doped tunnel junction.. Nanotechnology, Institute of Physics, 2020, 31 (46), pp.465706. ⟨10.1088/1361-6528/ab996c⟩. ⟨hal-03411352⟩

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