Threshold MnAs thickness for the formation of ordered α/β stripes in MnAs/GaAs(001) - Archive ouverte HAL Access content directly
Journal Articles Journal of Physics D: Applied Physics Year : 2020

Threshold MnAs thickness for the formation of ordered α/β stripes in MnAs/GaAs(001)

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Abstract

Manganese arsenide layers epitaxially grown on GaAs(001) are known to feature a temperature dependent self-assembled microstructure of ordered stripes, alternating the ferromagnetic α and paramagnetic β phases. The surface dipolar fields generated by the α/β stripes have been used for achieving temperature controlled magnetization switching of a ferromagnetic overlayer. For this kind of application, it is advantageous to minimize the MnAs layer thickness. In this work we investigate, using x-ray scattering techniques, the presence of the ordered microstructure as a function of the MnAs layer thickness and we identify a minimum value of ~40 nm for the formation of ordered α/β stripes in MnAs/GaAs(001). These results have an impact for envisaging magnetization-switching applications that rely on the control of the temperature-or laser-driven surface dipolar fields in MnAs-based devices.
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Dates and versions

hal-03028454 , version 1 (27-11-2020)

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Maurizio Sacchi, Nicolas Casaretto, Leticia Coelho, Mahmoud Eddrief, Jialin Ma, et al.. Threshold MnAs thickness for the formation of ordered α/β stripes in MnAs/GaAs(001). Journal of Physics D: Applied Physics, 2020, 53 (26), pp.265005. ⟨10.1088/1361-6463/ab82da⟩. ⟨hal-03028454⟩
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