Hybridization of ellipsometry and energy loss spectra from XPS for bandgap and optical constants determination in SiON thin films

Joao Resende (1) , David Fuard (1) , Delphine Le Cunff (2) , Jean-Herve Tortai (1) , Bernard Pelissier (1)

1 LTM - Laboratoire des technologies de la microélectronique
2 ST-CROLLES - STMicroelectronics [Crolles]

Comparison of bandgap determination using ellipsometry and ELS-XPS. • Large energy bandgap difference between the two methods, up to 1.6 eV. • Combination of the two techniques, using a triple Tauc-Lorentz oscillator model. • Robust determination of the bandgap in the SiO 2-Si 3 N 4 system. • Method to measure n and k in a large energy range, from 1.5 up to 30 eV.

Domains: Engineering Sciences [physics]

Joao Resende, David Fuard, Delphine Le Cunff, Jean-Herve Tortai, Bernard Pelissier. Hybridization of ellipsometry and energy loss spectra from XPS for bandgap and optical constants determination in SiON thin films. Materials Chemistry and Physics, 2020, 259, pp.124000. ⟨10.1016/j.matchemphys.2020.124000⟩. ⟨hal-03017737⟩