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Thermally deposited silk fibroin as the gate dielectric layer in organic thin-film transistors based on conjugated polymer

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https://hal-cnrs.archives-ouvertes.fr/hal-02954615
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Submitted on : Thursday, October 1, 2020 - 11:05:26 AM
Last modification on : Wednesday, December 16, 2020 - 8:56:05 AM

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Fang-Cheng Liang, yi-Hsing Huang, Chi-Ching Kuo, Chia-Jung Cho, Syang-Peng Rwei, et al.. Thermally deposited silk fibroin as the gate dielectric layer in organic thin-film transistors based on conjugated polymer. Reactive and Functional Polymers, Elsevier, 2018, 131, pp.368-377. ⟨10.1016/j.reactfunctpolym.2018.08.010⟩. ⟨hal-02954615⟩

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