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Nanostructure- and Orientation-Controlled Resistive Memory Behaviors of Carbohydrate- block -Polystyrene with Different Molecular Weights via Solvent Annealing
Tsung-Han Chuang
1
Yun-Chi Chiang
Hui-Ching Hsieh
Takuya Isono
Chao-Wei Huang
Redouane Borsali
Toshifumi Satoh
Wen-Chang Chen
Chao-Wei Huang
Author
Redouane Borsali
Author IdHAL : redouane-borsali ORCID : https://orcid.org/0000-0002-7245-586X
Toshifumi Satoh
Author
Wen-Chang Chen
Author
1
TAIPEI TECH - National Taipei University of technology [Taipei] (1, Sec. 3, Zhongxiao E. Rd., Taipei 10608 - Taiwan)
- National Taipei University of Technology (1, Secc.3, Chung-Hsiao E. Rd. Taipei 106 Taiwan - Taiwan)
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Journal articles
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https://hal-cnrs.archives-ouvertes.fr/hal-02954393
Contributor : Redouane Borsali Connect in order to contact the contributor
Submitted on : Thursday, October 1, 2020 - 9:08:55 AM
Last modification on : Wednesday, December 16, 2020 - 8:56:05 AM
Contributor : Redouane Borsali Connect in order to contact the contributor
Submitted on : Thursday, October 1, 2020 - 9:08:55 AM
Last modification on : Wednesday, December 16, 2020 - 8:56:05 AM
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- HAL Id : hal-02954393, version 1
- DOI : 10.1021/acsami.0c04551
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Tsung-Han Chuang, Yun-Chi Chiang, Hui-Ching Hsieh, Takuya Isono, Chao-Wei Huang, et al.. Nanostructure- and Orientation-Controlled Resistive Memory Behaviors of Carbohydrate- block -Polystyrene with Different Molecular Weights via Solvent Annealing. ACS Applied Materials & Interfaces, Washington, D.C. : American Chemical Society, 2020, 12 (20), pp.23217-23224. ⟨10.1021/acsami.0c04551⟩. ⟨hal-02954393⟩
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