High Pressure, High Temperature Behavior of Sn-Ge-N and Si-Ti-N Compounds

Shrikant Bhat; R. Faria; J. C.; T. Katsura; Samuel Bernard; Ralf Riedel

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High Pressure, High Temperature Behavior of Sn-Ge-N and Si-Ti-N Compounds

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Shrikant Bhat

Function : Author

R. Faria

Function : Author

J. C.

Function : Author

T. Katsura

Function : Author

Institute for Study of the Earth's Interior

Samuel Bernard

Function : Author
PersonId : 184975
IdHAL : samuelbernard
ORCID : 0000-0001-5865-0047
IdRef : 070381240

IRCER - Axe 4 : céramiques sous contraintes environnementales

Ralf Riedel

Function : Author

Technische Universität Darmstadt - Technical University of Darmstadt

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Chemical Sciences

Samuel Bernard : Connect in order to contact the contributor

https://hal-cnrs.archives-ouvertes.fr/hal-02861710

Submitted on : Tuesday, June 9, 2020-10:39:12 AM

Last modification on : Tuesday, September 27, 2022-4:17:02 AM

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hal-02861710 , version 1 (09-06-2020)

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HAL Id : hal-02861710 , version 1

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Shrikant Bhat, R. Faria, J. C., T. Katsura, Samuel Bernard, et al.. High Pressure, High Temperature Behavior of Sn-Ge-N and Si-Ti-N Compounds. 9th International Workshop Spinel Nitrides and Related Materials, Sep 2018, Rüdesheim, Germany. ⟨hal-02861710⟩

High Pressure, High Temperature Behavior of Sn-Ge-N and Si-Ti-N Compounds

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