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GaAs (1 1 1) epilayers grown by MBE on Ge (1 1 1): Twin reduction and polarity
D. Pelati
1
G. Patriarche
1
O. Mauguin
1
L. Largeau
1
L. Travers
1
F. Brisset
2
F. Glas
1
F. Oehler
1
L. Travers 1
Author
F. Brisset 2
Author
F. Glas 1
Author IdHAL : glas ORCID : https://orcid.org/0000-0002-3179-2018
F. Oehler 1
Author IdHAL : fabrice-oehler ORCID : https://orcid.org/0000-0003-1020-160X
1
C2N - Centre de Nanosciences et de Nanotechnologies (10 Boulevard Thomas Gobert, 91120, Palaiseau - France)
- Université Paris-Saclay (Espace Technologique, Bat. Discovery - RD 128 - 2e ét., 91190 Saint-Aubin - France)
- CNRS - Centre National de la Recherche Scientifique : UMR 9001 (France)
2
ICMMO - Institut de Chimie Moléculaire et des Matériaux d'Orsay (bat. 420 91405 ORSAY CEDEX - France)
- CNRS - Centre National de la Recherche Scientifique : UMR8182 (France)
- Université Paris-Saclay (Espace Technologique, Bat. Discovery - RD 128 - 2e ét., 91190 Saint-Aubin - France)
Document type :
Journal articles
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https://hal-cnrs.archives-ouvertes.fr/hal-02351877
Contributor : Gilles Patriarche <>
Submitted on : Wednesday, November 6, 2019 - 3:40:40 PM
Last modification on : Tuesday, November 24, 2020 - 12:40:02 PM
Contributor : Gilles Patriarche <>
Submitted on : Wednesday, November 6, 2019 - 3:40:40 PM
Last modification on : Tuesday, November 24, 2020 - 12:40:02 PM
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Identifiers
- HAL Id : hal-02351877, version 1
- DOI : 10.1016/j.jcrysgro.2019.05.006
Citation
D. Pelati, G. Patriarche, O. Mauguin, L. Largeau, L. Travers, et al.. GaAs (1 1 1) epilayers grown by MBE on Ge (1 1 1): Twin reduction and polarity. Journal of Crystal Growth, Elsevier, 2019, 519, pp.84-90. ⟨10.1016/j.jcrysgro.2019.05.006⟩. ⟨hal-02351877⟩
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