GaAs (1 1 1) epilayers grown by MBE on Ge (1 1 1): Twin reduction and polarity - Archive ouverte HAL Access content directly
Journal Articles Journal of Crystal Growth Year : 2019

GaAs (1 1 1) epilayers grown by MBE on Ge (1 1 1): Twin reduction and polarity

(1) , (1) , (1) , (1) , (1) , (2) , (1) , (1)
1
2

Abstract

We perform the growth of GaAs (1 1 1) epilayers on nominal Ge(1 1 1) wafers by molecular beam epitaxy (MBE). The polarity of GaAs is (1 1 1)A and homongeneous over the full area, as measured by transmission electron microscopy and high energy electron diffraction. This orientation conflicts with the common growth model for GaAs on Ge(1 1 1). Twinned domains are the main defects in our GaAs (1 1 1) epilayers. Using cathodoluminescence, we observe that some twin boundaries hold large number of non-radiative recombination centers. During growth, we find that only a narrow domain of As:Ga ratios lead to the growth of smooth and twin-free GaAs (1 1 1)A epilayers. At low As:Ga ratio, the surface is rough; while at high As:Ga ratio the epilayers present large densities of twinned domains.
Fichier principal
Vignette du fichier
GaAs_Ge_v4.pdf (6.44 Mo) Télécharger le fichier
Origin : Files produced by the author(s)

Dates and versions

hal-02351877 , version 1 (29-07-2021)

Identifiers

Cite

D. Pelati, G. Patriarche, O. Mauguin, L. Largeau, L. Travers, et al.. GaAs (1 1 1) epilayers grown by MBE on Ge (1 1 1): Twin reduction and polarity. Journal of Crystal Growth, 2019, 519, pp.84-90. ⟨10.1016/j.jcrysgro.2019.05.006⟩. ⟨hal-02351877⟩
50 View
68 Download

Altmetric

Share

Gmail Facebook Twitter LinkedIn More