GaAs (1 1 1) epilayers grown by MBE on Ge (1 1 1): Twin reduction and polarity

D. Pelati G. Patriarche 1 O. Mauguin 1 L. Largeau 1 L. Travers 2 F. Brisset 3 F. Glas 2 F. Oehler 4
1 LPN - Laboratoire de photonique et de nanostructures
2 C2N - Centre de Nanosciences et de Nanotechnologies [Marcoussis]
3 CECILLE - Centre d'Études en Civilisations Langues et Lettres Étrangères (CECILLE) - EA 4074
4 Ecole Nationale Supérieure Agronomique de Toulouse
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Journal articles
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https://hal-cnrs.archives-ouvertes.fr/hal-02351877
Contributor : Gilles Patriarche <>
Submitted on : Wednesday, November 6, 2019 - 3:40:40 PM
Last modification on : Friday, November 8, 2019 - 1:41:11 AM

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CNRS | CECILLE | UNIV-LILLE | UNIV-PARIS7 | UNIV-PARIS-SACLAY | USPC

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D. Pelati, G. Patriarche, O. Mauguin, L. Largeau, L. Travers, et al.. GaAs (1 1 1) epilayers grown by MBE on Ge (1 1 1): Twin reduction and polarity. Journal of Crystal Growth, Elsevier, 2019, 519, pp.84-90. ⟨10.1016/j.jcrysgro.2019.05.006⟩. ⟨hal-02351877⟩

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