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Effects of nitrogen incorporation and thermal annealing on the optical and spin properties of GaPN dilute nitride alloys
Miguel Angel Gonzalez Balanta
1, 2, *
P. B. Alves de Oliveira
1
H. Albalawi
1, 3
Yara Galvão Gobato
1
Helder Vinícius Avanço Galeti
1
A.D. Rodrigues
1
Mohamed Henini
4
Samy Almosni
5
Cédric Robert
6
Andrea Balocchi
6
Yoan Léger
5
Hélène Carrère
6
Mounib Bahri
7
Gilles Patriarche
7
Xavier Marie
6
Charles Cornet
5
*
Corresponding author
Miguel Angel Gonzalez Balanta 1, 2
Correspondent author
P. B. Alves de Oliveira 1
Author
H. Albalawi 1, 3
Author
Yara Galvão Gobato 1
Author
Helder Vinícius Avanço Galeti 1
Author
A.D. Rodrigues 1
Author
Mohamed Henini 4
Author
Samy Almosni 5
Author
Cédric Robert Robert 6
Author IdHAL : cedric-robert IdRef : https://www.idref.fr/174902948
Andrea Balocchi 6
Author IdHAL : andrea-balocchi ORCID : https://orcid.org/0000-0001-5252-5309
Yoan Léger 5
Author IdHAL : yoan-leger arXiv : https://arxiv.org/a/yoan.leger@insa-rennes.fr ORCID : https://orcid.org/0000-0003-0807-0049
Hélène Carrère 6
Author IdHAL : helene-carrere ORCID : https://orcid.org/0000-0003-0027-3378
Mounib Bahri 7
Author
Gilles Patriarche 7
Author
Xavier Marie 6
Author IdHAL : xavier-marie
Charles Cornet 5
Author IdHAL : charles-cornet ORCID : https://orcid.org/0000-0002-1363-7401
1
UFSCar - Federal University of São Carlos (Rod. Washington Luís
km 235 - SP-310 - São Carlos - Brazil)
3
Princess Nourah Bint Abdulrahman University (Riyadh - Saudi Arabia)
4
UON - University of Nottingham, UK (University of Nottingham
University Park
Nottingham
NG7 2RD - United Kingdom)
5
Institut FOTON - Institut des Fonctions Optiques pour les Technologies de l'informatiON (ENSSAT 6, rue de Kerampont CS 80518 22305 LANNION Cedex - France)
- IMT Atlantique - IMT Atlantique Bretagne-Pays de la Loire (Campus Brest : Technopôle Brest-Iroise CS 8381829238 BREST Cedex 3 -
Campus Nantes : 4, rue Alfred Kastler- La chantrerie 44300 NANTES -
Campus Rennes : 2 Rue de la Châtaigneraie, 35510 CESSON SEVIGNE - France)
- IMT - Institut Mines-Télécom [Paris] (37-39 Rue Dareau, 75014 Paris - France)
- ENSSAT - École Nationale Supérieure des Sciences Appliquées et de Technologie (6 rue de Kerampont - BP 80518 - 22305 Lannion Cedex - France)
- UBL - Université Bretagne Loire (Cité Internationale, 1 place Paul Ricoeur - CS 54417 35044 RENNES CEDEX - France)
- INSA Rennes - Institut National des Sciences Appliquées - Rennes (20, avenue des Buttes de Coësmes - CS 70839 - 35708 Rennes cedex 7 - France)
- UR1 - Université de Rennes 1 (2 rue du Thabor - CS 46510 - 35065 Rennes cedex - France)
- UNIV-RENNES - Université de Rennes (France)
- CNRS - Centre National de la Recherche Scientifique : UMR6082 (France)
6
LPCNO - Laboratoire de physique et chimie des nano-objets (135 rue de Rangueil 31077 TOULOUSE CEDEX 4 - France)
- INSA Toulouse - Institut National des Sciences Appliquées - Toulouse (135, avenue de Rangueil - 31077 Toulouse cedex 4 - France)
- ICT-FR 2599 - Institut de Chimie de Toulouse (118 Route de Narbonne 31062 Toulouse cédex 9 - France)
- IRD - Institut de Recherche pour le Développement (Siège Le Sextant 44, bd de Dunkerque CS 90009 13572 Marseille cedex 02 - France)
- UT3 - Université Toulouse III - Paul Sabatier (118 route de Narbonne - 31062 Toulouse - France)
- Université Fédérale Toulouse Midi-Pyrénées (41 Allée Jules Guesde, 31000 Toulouse - France)
- CNRS - Centre National de la Recherche Scientifique : UAR2599 / FR2599 (France)
- Toulouse INP - Institut National Polytechnique (Toulouse) (France)
- Université Fédérale Toulouse Midi-Pyrénées (41 Allée Jules Guesde, 31000 Toulouse - France)
- IRSAMC - Institut de Recherche sur les Systèmes Atomiques et Moléculaires Complexes : UMR5215 (UPS - IRSAMC. - Bat. IIIr1-B4. - 118 route de Narbonne 31062 Toulouse cedex - France)
- INSA Toulouse - Institut National des Sciences Appliquées - Toulouse (135, avenue de Rangueil - 31077 Toulouse cedex 4 - France)
- UT3 - Université Toulouse III - Paul Sabatier (118 route de Narbonne - 31062 Toulouse - France)
- Université Fédérale Toulouse Midi-Pyrénées (41 Allée Jules Guesde, 31000 Toulouse - France)
- CNRS - Centre National de la Recherche Scientifique : FR2568 (France)
7
C2N - Centre de Nanosciences et de Nanotechnologies (10 Boulevard Thomas Gobert, 91120, Palaiseau - France)
- Université Paris-Saclay (Espace Technologique, Bat. Discovery - RD 128 - 2e ét., 91190 Saint-Aubin - France)
- CNRS - Centre National de la Recherche Scientifique : UMR 9001 (France)
Abstract : Here, we report on the structural, optical and magneto-optical properties of as-grown and thermal annealed GaPN thin films containing different N concentrations grown by Solid-Source Molecular Beam Epitaxy on GaP substrates. A wide range of characterization techniques were used to investigate the effect of N incorporation and thermal annealing effect of GaPN/GaP epilayers for a N content between 0.5% and 3%. Our results have shown that as we increase the N content the PL peak energy presents a red shift which is explained by a band gap reduction. However, important effects of exciton localization on optical properties were also evidenced from cw and time resolved PL (PLRT) and magneto-PL. Our results have demonstrated that as the concentration of N is increased, exciton localization effect is enhanced. A substantial improvement of the optical quality and spin properties of the epilayers has been observed after thermal annealing which are significantly more important for samples with higher nitrogen contents.
Document type :
Journal articles
Domain :
Complete list of metadata
https://hal-cnrs.archives-ouvertes.fr/hal-02351836
Contributor : Gilles Patriarche <>
Submitted on : Wednesday, November 6, 2019 - 3:32:25 PM
Last modification on : Wednesday, April 14, 2021 - 3:40:43 AM
Contributor : Gilles Patriarche <>
Submitted on : Wednesday, November 6, 2019 - 3:32:25 PM
Last modification on : Wednesday, April 14, 2021 - 3:40:43 AM
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Identifiers
- HAL Id : hal-02351836, version 1
- DOI : 10.1016/j.jallcom.2019.152233
Collections
CNRS | IRSAMC | UNIV-TLSE3 | UNIV-RENNES1 | INSA-TOULOUSE | LPCNO | UNIV-RENNES | INSA-GROUPE | FOTON | FOTON_OHM | FOTON-INSA | INSA-RENNES | INSTITUT-TELECOM | GS-ENGINEERING
Citation
Miguel Angel Gonzalez Balanta, P. B. Alves de Oliveira, H. Albalawi, Yara Galvão Gobato, Helder Vinícius Avanço Galeti, et al.. Effects of nitrogen incorporation and thermal annealing on the optical and spin properties of GaPN dilute nitride alloys. Journal of Alloys and Compounds, Elsevier, 2020, 814, pp.152233. ⟨10.1016/j.jallcom.2019.152233⟩. ⟨hal-02351836⟩
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