Experimental Study and Device Design of NO, NO2, and NH3 Gas Detection for a Wide Dynamic and Large Temperature Range Using Pt/AlGaN/GaN HEMT

Chris Bishop (1) , Yacine Halfaya (1) , Ali Soltani (2, 1) , Suresh Sundaram (1) , Xin Li (1) , Jérémy Streque (3, 1) , Youssef El Gmili (1) , Paul B Voss (1) , Jean-Paul Salvestrini (2, 1) , Abdallah Ougazzaden (1)

1 Georgia Tech Lorraine [Metz]
2 LMOPS - Laboratoire Matériaux Optiques, Photonique et Systèmes
3 IEMN - Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520

We report an AlGaN/GaN HEMT gas sensor designed to enable NO, NO2, and NH3 detection from 100°C-400°C over a large concentration range. Device modeling is performed to optimize several HEMT device parameters for sensing, and the experimental results show that the optimized sensor has improved performance compared with the previously reported HEMT sensors. The device shows significant no sensitivity for the first time in an HEMT device, with sensitivity up to 7% at 400°C. In addition, high sensitivities of up to 17% are reported for NO2, and NH3 is detected at concentrations as low as 150 ppb.

Mots clés: Logic gates; HEMTs; Sensor phenomena and characterization; Wide band gap semiconductors; Aluminum gallium nitride

Domaines: Micro et nanotechnologies/Microélectronique; Ingénierie de l'environnement

Chris Bishop, Yacine Halfaya, Ali Soltani, Suresh Sundaram, Xin Li, et al.. Experimental Study and Device Design of NO, NO2, and NH3 Gas Detection for a Wide Dynamic and Large Temperature Range Using Pt/AlGaN/GaN HEMT. IEEE Sensors Journal, 2016, 16 (18), pp.6828-6838. ⟨10.1109/JSEN.2016.2593050⟩. ⟨hal-02385234⟩