Double-Heterojunction Bipolar Transistor as THz Detector for Communications

Isidore Diouf (1, 2) , Philippe Nouvel (1) , Luca Varani (1, 2) , Annick Pénarier (1, 2) , Nina Diakonova (3) , Dominique Coquillat (3) , V. Nodjiadjim (4) , M. Riet (4) , Nicolas Zerounian (5) , F. Aniel (5) , S. Blin (1, 2)

1 IES - Institut d’Electronique et des Systèmes
2 MOST - Modélisation et Spectroscopie THz
3 L2C - Laboratoire Charles Coulomb
4 III-V Lab - Alcatel-Thalès III-V lab
5 C2N - Centre de Nanosciences et de Nanotechnologies

We investigate the use of an InP-based double-heterojunction bipolar transistor as a detector for wireless communications around 300~GHz. The sensitivity of the detector, along with its complex output impedance are characterized for a transistor (un)coupled to a log-spiral antenna, at different biases. A real-time uncompressed high-definition video signal is successfully transmitted at 1.5 Gbps in a heterodyne configuration.

Domaines: Physique Générale [physics.gen-ph]

Isidore Diouf, Philippe Nouvel, Luca Varani, Annick Pénarier, Nina Diakonova, et al.. Double-Heterojunction Bipolar Transistor as THz Detector for Communications. 2021 46th International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz), Aug 2021, Chengdu, China. ⟨10.1109/IRMMW-THz50926.2021.9566983⟩. ⟨hal-03413094⟩