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Article Dans Une Revue Applied Physics Letters Année : 2022

Colloidal II–VI—Epitaxial III–V heterostructure: A strategy to expand InGaAs spectral response

Adrien Khalili
Tung Huu Dang
Audrey Chu
Eva Izquierdo
Corentin Dabard
Charlie Gréboval
Huichen Zhang
Yoann Prado

Résumé

For short wave infrared (SWIR) sensing, InGaAs is the leading technology combining high carrier mobility, high homogeneity and complete control over n-top doping. In the meanwhile, numerous alternative materials have tried to compete with InGaAs. Among them, colloidal nanocrystals with narrow band gap can address the current issue in designing cost-effective sensors for the SWIR range. Rather than pitting these two materials against each other, here we design a synergistic duo in which HgTe nanocrystals are used to broaden the spectral range of InGaAs while lifting the lattice matching constraints. We propose a diode geometry where a p-type HgTe NC array is coupled with n-type InGaAs wires which are used as high mobility (µ>1000 cm 2 .V-1 s-1) minority carrier extractors. This approach also demonstrates that Van der Waals heterostructures are not limited to graphene-like materials and that bulk-like III-V semiconductors can also be light sensitized by colloidal nanoparticles. This work paves the way toward further synergies between epitaxially grown and colloidally grown semiconductors for infrared detection.
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Dates et versions

hal-03549261 , version 1 (31-01-2022)

Identifiants

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Adrien Khalili, Claire Abadie, Tung Huu Dang, Audrey Chu, Eva Izquierdo, et al.. Colloidal II–VI—Epitaxial III–V heterostructure: A strategy to expand InGaAs spectral response. Applied Physics Letters, 2022, 120 (5), pp.051101. ⟨10.1063/5.0076708⟩. ⟨hal-03549261⟩
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