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Article Dans Une Revue Journal of Physical Chemistry C Année : 2022

Extended Short-Wave Photodiode based on CdSe/HgTe/Ag2Te Stack with High Internal Efficiency

Charlie Gréboval
Tung Huu Dang
Adrien Khalili
Claire Abadie
Mathieu Silly
  • Fonction : Auteur

Résumé

Nanocrystal integration into focal plane arrays requires the development of new photodiode designs combining an efficient charge dissociation with a low dark current. Previously reported architectures based on HgTe/Ag2Te stacks appear to be sub-optimal for cutoff wavelengths below 2.5 µm. Here, we show that the introduction of a thin and strongly coupled CdSe layer acting as an electron transport layer and a unipolar barrier drastically improves the electrical performances. This diode achieves a responsivity as high as 0.8 A•W-1 , corresponding to an internal efficiency above 90 % for a 2 µm cutoff wavelength. The specific detectivity is close to 10 11 Jones at room temperature and reaches 9x10 11 Jones at 200 K, the highest value reported for HgTe nanocrystal-based photodiode with operation around 2 µm. The diode time response can be as short as 200 ns and appears to be limited by band bending dynamics as revealed by time-resolved photoemission measurements.
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Dates et versions

hal-03755010 , version 1 (20-08-2022)

Identifiants

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Prachi Rastogi, Eva Izquierdo, Charlie Gréboval, Mariarosa Cavallo, Audrey Chu, et al.. Extended Short-Wave Photodiode based on CdSe/HgTe/Ag2Te Stack with High Internal Efficiency. Journal of Physical Chemistry C, 2022, 126 (32), pp.13720-13728. ⟨10.1021/acs.jpcc.2c02044⟩. ⟨hal-03755010⟩
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