Investigation of charge transport properties of [1]Benzothieno[3,2-b][1]-benzothiophene single-crystals in field-effect transistor configuration

Xiao Liu (1) , Xiaolu Su (1) , Clément Livache (2) , Lise-Marie Chamoreau (1) , Sébastien Sanaur (3) , Lydia Sosa-Vargas (1) , Jean-Charles Ribierre (4) , David Kreher (1) , Emmanuel Lhuillier (2) , Emmanuelle Lacaze (2) , Fabrice Mathevet (1)

1 IPCM - Institut Parisien de Chimie Moléculaire
2 INSP-E6 - Physico-chimie et dynamique des surfaces
3 Mines Saint-Étienne MSE - École des Mines de Saint-Étienne
4 Zhejiang University of Technology

Single-crystals of unsubstituted [1]Benzothieno[3,2-b][1]-benzothiophene (BTBT) were prepared by physical vapor transport deposition (VTP). The packing structure and morphology of the crystals were studied by X-ray diffraction (XRD), polarized optical microscopy (POM), scanning electron microscopy (SEM) and atomic force microscopy (AFM). The charge transport properties of BTBT single-crystals were also investigated via bottom contact/bottom gate (BC/BG) organic field-effect transistors (OFETs) on both SiO2 and n-octadecyltrichlorosilane (OTS) treated surfaces. A maximum hole mobility value of 0.032 cm2V−1s−1 was measured on the OTS substrate. In addition, single-crystal OFETs with ion gel top gate (TG) configuration were also investigated for low voltage operation. This work represents the first investigation of charge carrier mobility of a simple BTBT in transistor configuration and highlights the essential role of the BTBT substitution in charge transport properties.

Domaines: Matériaux

Xiao Liu, Xiaolu Su, Clément Livache, Lise-Marie Chamoreau, Sébastien Sanaur, et al.. Investigation of charge transport properties of [1]Benzothieno[3,2-b][1]-benzothiophene single-crystals in field-effect transistor configuration. Organic Electronics, 2020, 78, pp.105605. ⟨10.1016/j.orgel.2019.105605⟩. ⟨hal-02450526⟩