Detailed electrical characterization of 200mm CMOS compatible GaN/Si HEMTs down to deep cryogenic temperatures - Archive ouverte HAL Access content directly
Journal Articles Solid-State Electronics Year : 2022

Detailed electrical characterization of 200mm CMOS compatible GaN/Si HEMTs down to deep cryogenic temperatures

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Abstract

A detailed electrical characterization and transistor parameter extraction on 200mm CMOS compatible GaN/Si HEMTs was performed down to deep cryogenic temperatures. The main transistor parameters (threshold voltage Vth, low-field mobility μ0, subthreshold swing SS, source-drain series resistance Rsd) were extracted in linear region using the Y-function and the Lambert-W function methods for gate lengths down to 0.1µm. The Y-function method was also employed in saturation region for the extraction of the saturation velocity. The results indicate that these GaN/Si HEMT devices demonstrate a very good functionality down to very low temperature with improvement of mobility and subthreshold slope. It was also shown by TLM analysis that the source-drain series resistance Rsd is more limited by the contact resistance than by the 2DEG access region resistance as temperature is lowered
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Dates and versions

hal-03769945 , version 1 (14-11-2022)

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Donghyun Kim, C. Theodorou, A. Chanuel, Y. Gobil, M. Charles, et al.. Detailed electrical characterization of 200mm CMOS compatible GaN/Si HEMTs down to deep cryogenic temperatures. Solid-State Electronics, 2022, 197, pp.108448. ⟨10.1016/j.sse.2022.108448⟩. ⟨hal-03769945⟩
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