Channel-Width-Dependent Mobility Degradation in Bulk Conduction Regime of Tri-Gate Junctionless Transistors - Archive ouverte HAL Access content directly
Journal Articles IEEE Transactions on Electron Devices Year : 2022

Channel-Width-Dependent Mobility Degradation in Bulk Conduction Regime of Tri-Gate Junctionless Transistors

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hal-03697387 , version 1 (29-08-2022)

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Dae-Young Jeon, Mireille Mouis, Sylvain Barraud, Gerard Ghibaudo. Channel-Width-Dependent Mobility Degradation in Bulk Conduction Regime of Tri-Gate Junctionless Transistors. IEEE Transactions on Electron Devices, 2022, 69 (6), pp.3037-3041. ⟨10.1109/TED.2022.3172056⟩. ⟨hal-03697387⟩
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